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This lecture note explains the following topics: What is a device model, Constituents of a device model, Ideal Diode Model, Real Diode Model, IC design procedure, Semi-classical Bulk Transport: Qualitative Model, EM field and Transport Equations.
Author(s): NPTEL
NAPages
This note explains statistical modeling and the control of semiconductor fabrication processes and plants. Topics covered includes: design of experiments, response surface modeling, and process optimization, defect and parametric yield modeling, process or device or circuit yield optimization, monitoring, diagnosis, and feedback control of equipment and processes, and analysis and scheduling of semiconductor manufacturing operations.
Author(s): Prof. Duane Boning
NAPages
Understanding semiconductor devices is critical in designing and improving many types of systems. This note will give you an understanding of how devices work, the critical issue and the key design tradeoffs in the devices.
Author(s): Dr. Alan Doolittle
NAPages
This lecture note covers the following topics: Building block of silicon devices and general band diagram, Semiconductor statistics based on general band diagram, Transport Equation, Relaxation time, PN junction as a basic building block, Voltage limitation, PN junction under light, BJT general operation principle, BJT general opera, CV characteristics of MOS devices , MOSFET mobility, Nonideal MOS characteristics, Trend of the scaled MOSFET structure.
Author(s): Seoul National University
NAPages
This lecture note covers the following topics related to power semiconductors: Basics of Power semiconductors, Semiconductor Fundamentals and Transport Physics, P-N Junction and Breakdown Mechanisms, Power Rectifier and Power BJT, Power MOSFET, Insulated Gate Bipolar Transistor and State-of-the-art Power Devices.
Author(s): Prof. Sudip K. Mazumder
NAPages
Covered topics are: operation of diodes and bipolar junction transistors, bipolar devices to include the influence of recombination, the physical mechanisms underlying the delays and speed limitations of the devices and to extract equivalent circuit models for the devices.
Author(s): Dr. K. Fobelets
55Pages
